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| Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE (SAT), = 1.0V @ Ic / Ib = 1A / 0.2A Features Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though comer spirit product. Low base drive requirement. Suitable for half bridge light ballast applications. Ordering Information Part No. TSC5302DCH TSC5302DCP Packing Tube T&R Package TO-251 TO-252 Block Diagram Structure Silicon triple diffused type. NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Collector Power Dissipation (Tc=25 C) o Symbol VCBO VCEO VEBO IC Limit 800V 400V 10 2 4 Unit V V V A IB 1 2 A TO-251 TO-252 PD 75 1.5 W Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty <= 2% TJ TSTG Rjc Rja +150 - 65 to +150 6.25 100 o o o o C C C/W C/W TS5302D Preliminary 1-1 2004/09 rev. A Preliminary Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 5mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A Base-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A DC Current Gain VCE = 5V, IC = 0.4A VCE = 5V, IC = 1A Turn On Time Storage Time Fall Time Doide Fall Time Forward Voltage IC = 1A IC = 1A VCC = 250V, IC = 1A, IB1 = IB2 = 0.2A, tp= 25uS Duty cycle < 1% BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCB(SAT)1 VCB(SAT)2 hFE 1 hFE 2 800 400 10 ------20 6 ---------------2.0 ----10 10 0.4 0.6 0.9 1.0 --0.5 2.75 0.2 uS uS uS V V V V uA uA V Conditions Symbol Min Typ Max Unit tON tSTG tF tF Vf --- --- 700 1.4 nS V Note : pulse test: pulse width <=300uS, duty cycle <=2% TS5302D Preliminary 2-2 2004/09 rev. A Preliminary Electrical Characteristics Curve Figure 1. Static Characteric Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Switching Time Figure 5. Safe Operating Area Figure 6. Power Derating TS5302D Preliminary 3-3 2004/09 rev. A Preliminary TO-252 Mechanical Drawing J A E F DIM A B C D E F TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 0.520 5.340 1.460 1.580 0.570 5.550 1.640 0.057 0.020 0.210 0.057 0.062 0.022 0.219 0.065 I B G D C H G H I J TO-251 Mechanical Drawing DIM A A1 b C D D1 E e F L L1 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.20 1.10 0.40 0.40 6.70 5.40 6.40 2.10 0.40 7.00 1.60 2.4 1.30 0.80 0.60 7.30 5.65 6.65 2.50 0.60 8.00 1.86 0.087 0.043 0.016 0.016 0.264 0.213 0.252 0.083 0.016 0.276 0.063 0.095 0.051 0.032 0.024 0.287 0.222 0.262 0.098 0.024 0.315 0.073 TS5302D Preliminary 4-4 2004/09 rev. A Preliminary TS5302D Preliminary 5-5 2004/09 rev. A |
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